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Previous Year Exam Questions of Electrical And Electronics Engineering of bput - EEE by Bput Toppers

by Bput ToppersBput Toppers
Type: PYQInstitute: Biju Patnaik University of Technology BPUT Course: B.Tech Specialization: Electrical and Electronics EngineeringOffline Downloads: 1Views: 158Uploaded: 3 months ago

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Bput Toppers
Bput Toppers
Registration No : Total Number of Pages : 03 B.Tech. PEN2B101 2nd Semester Regular / Back Examination 2017-18 ELECTRICAL & ELECTRONICS ENGINEERING BRANCH : AEIE, AERO, AUTO, BIOMED, BIOTECH, CHEM, CIVIL, CSE, ECE, EEE, EIE, ELECTRICAL, ENV, ETC, FAT, IEE, IT, MANUFAC, MANUTECH, MECH, METTA, MINERAL, MINING, MME, PE, PLASTIC, PT, TEXTILE Time : 3 Hours Max Marks : 100 Q.CODE : C705 Answer Part-A which is compulsory and any four from Part-B. The figures in the right hand margin indicate marks. Answer all parts of a question at a place. Q1 a) b) c) d) e) f) g) h) i) j) Q2 a) b) c) d) e) f) g) h) Part – A (Answer all the questions) Answer the following questions:multiple choice and fill in the blanks: (2 x 10) The resistance of a copper wire is R ohm. This wire is stretched to its double length. The new resistance is, (i) RΩ (ii) 4R Ω (iii) 2RΩ (iv) R/2 Ω The average power in purely inductive circuit for one complete cycle is (i)ErmsIrms (ii) zero (iii)Emax Imax (iv) (EmaxIma)/2 Binary representation of the decimal number 25 is (i) 10001 (ii)11001 (iii)11101 (iv)10110 The current gain of BJT in common base is (i) α (ii)β (iii) γ (iv) none of these. The rms value of 200 V DC supply is ______________ . The ripple factor of half wave rectifier is _______ and for full wave rectifier is ________ The mobility of electrons in a materials is expressed in unit of _________ A three Phase balanced delta connected load is connected to symmetrical three phase 440 V balanced supply. The current in each phase is 15 A and leads 60 degree ahead of the corresponding phase voltage. Then line current will be ___ A two pole DC generator running at 1500 rpm has 40 conductors. The flux per pole is 1mWb. The induced emf if the armature winding is ________ for lap connected and _________ for wave connected. According to 1oolean law: A + 1 = ______ and A + 0 =__________ Answer the following questions: Short answer type: Three resistor of resistance (R1=10 Ω, R2=5 Ω and R3=3 Ω) are connected in star network, convert it into delta network and find out its equivalent delta resistance . Define Unilateral and bilateral elements. Convert following number into decimal number (i) 34.858 (ii) 110.101012 Draw the circuit diagram of half wave rectifier. State De morgen’s theorem. Calculate the time taken by a capacitor of 1 µF in series with a 1M Ω resistance to be charged up to 80% of the final value. What is apparent power, active power and reactive power? What is P and N type semiconductor? (2 x 10)
i) j) A zener diode acts as a voltage regulator. Explain the meaning of the statement. What is the working principle of DC machines? Part – B (Answer any four questions) Q3 a) Find the current through 40 Ω resistor using superposition theorem for the circuit shown in figure 1. (5) Figure 1 Figure 2 Q4 b) State the maximum power transfer theorem and obtain the maximum power transferred to RL in the circuit shown in Figure 2. And also find the value of RL (10) a) Explain the principle of operation of a transformer in detail and Derive the Emf equation of single phase transformer. Draw the phase voltage and line voltage phasor diagram for 3-phase star connected balanced system. A 3-phase 230 V load has power factor of 0.7. Two wattmeter are connected to measure the power which shows the input to be 10 kW. Find the readings of each wattmeter. (5) b) Q5 Q6 a) b) a) b) Explain the operation of a full wave bridge rectifier with relevant waveforms. Explain the V-I characteristics of a P-N junction diode when it is connected in forward bias and reverse bias. A PN junction diode gives a current of 50 mA at a room temperature of 20 dergee C when the forward bias voltage is 200mV. Determine (a) the saturation current with a negative bias (b) the diode current when room temperature is 30 degree C , and (c) diode current at a forward bias voltage. Explain the full adder circuit with its expression and truth table. List out all the basic logic gates and universal gateswith its logic symbols and truth table. And generate AND function, OR function and NOT function using any one Universal gate. (10) (5) (10) (5) (10)
Q7 a) b) Q8 a) b) A series circuit has R= 5 Ω, L= 13 mH and C=140 µF and is supplied with 230 v, 50 Hz single phase. Find (i) Impedance (ii) current (iii) power (iv) power factor of the circuit. An iron ring made up of three parts, l1=12cm, a1=6 cm2, l2 =10 cm, a2=5 cm2, l3=8 cm and a3 = 4 cm2. It is surrounded by a coil of 200 turns. Determine the exciting current required to create a flux of 0.5 mwb in the iron ring .[ Given µ1=2670, µ2= 1055, µ3= 680] (8) Simplify the function Y = (A+B)(A +C)(B+C) and design the circuit for simplified function using basic logic gates. Determine (i) IC(sat) (ii) IC (iii) VC(iv)VE and (v)VCE for the circuit shown in figure 3 . (8) (7) (7) Figure 3 Q9 a) b) c) d) e) Write a short note on any THREE : Magnetic material and B-H curve Different methods of transistor biasing. Generation and distribution of AC Power Transients in RL circuit with DC excitation circuit elements and their characteristics (5 x 3)

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