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Previous Year Exam Questions of Semiconductor Devices of bput - PSD by Verified Writer

  • Semiconductor Devices - PSD
  • 2017
  • PYQ
  • Biju Patnaik University of Technology Rourkela Odisha - BPUT
  • Electronics and Communication Engineering
  • B.Tech
  • 8291 Views
  • 105 Offline Downloads
  • Uploaded 1 year ago
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Q5 a) b) Derive the built in potential barrier for a PN junction diode ? Calculate, the width of the space charge region in a PN junction when a reverse bias voltage of 5 V is applied. Assuming Si PN junction at T=300K with doping concentrations NA =1016/cm3 and ND=1015/cm3, ni=1.5x1010/cm3. (10) (5) Q6 a) b) Derive the ideal current-voltage relationship for a PN junction diode? Differentiate between shot diode and long diode ? (10) (5) Q7 a) Describe the time delay factors in the frequency limitation of the bipolar transistor ? A Si NPN transistor at T=300K is given assuming the following parameters. IE=1mA, XB=0.5µm,XC=2.4µm,Cµ=0.1µF,Cje=1pF, Dn=25cm2/sec, rc=20Ω, Cs=0.1pF. Calculate the emitter to collector transit time and cut-off frequency. (10) b) (5) Q8 a) b) Define the threshold voltage. Derive the threshold voltage of MOSFET? The parameters of an n-channel MOSFET are µn=650cm2/v-s, tox=200Ȧ, (W/L) =50, and Vt=0.40 V. If the transistor is biased in the saturation region find the drain current for Vgs=1.2 V. (10) (5) Q9 a) Discuss with diagram the C-V characteristics of an MOS capacitor under high and low frequency conditions. Consider an aluminum gate–Silicon dioxide-P type Silicon MOS structure with tox =450 Ȧ. The silicon doping is ,NA=2x1016/cm3 and the flat band voltage, VFB=-1 V. determine the fixed oxide charges Q’ss. (10) b) (5)

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