Previous Year Exam Questions for Analog And Digital Electronics - ADE of 2017 - bput by Verified Writer
- Analog And Digital Electronics - ADE
- 2017
- PYQ
- Biju Patnaik University of Technology BPUT - BPUT
- Mechanical Engineering
- B.Tech
- 230 Views
- 4 Offline Downloads
- Uploaded 1 year ago
Text from page-1
Registration No: Total Number of Pages: 02 B.Tech PME5H006 5th Semester Regular Examination 2017-18 Analog & Digital Electronics BRANCH: MECH Time: 3 Hours Max Marks: 100 Q.CODE: B496 Answer Question No.1 and 2 which are compulsory and any four from the rest. The figures in the right hand margin indicate marks. Q1 a) b) c) d) e) f) g) h) i) j) Q2 a) b) c) d) e) f) g) h) i) Answer the following questions: multiple type or dash fill up type Emission coefficient of Germanium is …………. What is mean by PIV rating of a diode a) Maximum reverse bias potential which can be applied across a diode without breakdown b) Maximum forward bias potential which can be applied across a diode without breakdown c) Minimum potential required by a diode to reach conduction state d) Maximum power allowable to a diode When temperature increases reverse saturation current ……………… MOSFET can be used as a A. current controlled capacitor B. voltage controlled capacitor C. current controlled inductor D. voltage controlled inductors Which of the following is not associated with a p-n junction A.junction capacitance B.charge storage capacitance C.depletion capacitance D.channel length modulation The cascade amplifier is a multistage configuration of ---------------SR Flip flop can be converted to T-type flip-flop if …………… The load impedance ZL of a CE amplifier has R and L in series. The phase difference between output and input will be ……….. The Gray code for decimal number 6 is equivalent to …………… The decimal equivalent of 10010111 is ----- (2 x 10) Answer the following questions : What is difference between latch and flip-flop? What is barkhausen criterion ? The Boolean expression A.B+ A.B+ A.B is equivalent to . Derive the Shockley’s equation. What is common collector configuration of BJT ? What is the use of state diagram? A half wave diode circuit using ideal diode has an input voltage 20 sin ωt volts. Calculate the average and rms values of output voltage . Define race around condition. The input impedance of op-amp circuit of figure is (2 x 10)
Text from page-2
j) A CB amplifier has re = 6 Ω, RL = 600 Ω and a = 0.98. Find the voltage gain . a) (10) b) Draw the circuit for voltage divider configuration for BJT. a. Also derive the expression for the operating point. Write the differences between BJT and FET. a) For the circuit given below find ID, VDS, VGG (10) b) Write down current equation of diode and explain significance of each parameters. (5) a) Mention the types of feedback connections. Draw their block diagrams indicating input and output signal. List the general characteristics of a negative feedback amplifier and write its advantages. (10) (10) b) Convertthefollowingtoother canonical form. i) F(A,B,C,D)=Σ(0,2,6,11,13,14) ii) F(x,y,z)=Π(0,1,2,3,4,6,12) ObtainTruthtableforfunctionF=xy+xy’+y’z. Q7 a) b) Configure16 to1MUXusing4to1 MUX Implement XOR gate using NAND gate . (10) (5) Q8 a) (10) b) Define slew rate of Op–Amp. (ii) Determine the cutoff frequency of OP–amp whose unity gain bandwidth is 1 MHz and open loop gain is 2 x 105. (iii) List the expression for the output of non–inverting amplifier and inverting op-amp amplifier What is differences b/w ideal and practical op-amp amplifier? a) b) State and prove Demorgan’s laws Explain carry look ahead generator. (10) (5) Q3 Q4 Q5 b) Q6 Q9 a) (5) (5) (5) (5)
Leave your Comments