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Previous Year Exam Questions of Material Science of gce - MS by shanmugam.s

  • Material Science - MS
  • 2018
  • PYQ
  • ganesh college of enginnering - gce
  • Mechanical Engineering
  • B.Tech
  • 83 Views
  • Uploaded 8 months ago
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GANESH COLLEGE OF ENGINEERING, SALEM – 111 DEPARTMENT OF PHYSICS UNIT TEST - II Sub. Code : PH8251 Sub. Name : MATRIAL S IENCE Date : Max. Marks : Duration : Year & Sem : 05.04.2018 50 90 Mins I & II Answer All Questions PART – A [5x2=10 Marks] 1. What are engineering ceramics? 2. What is a composite? Write any two advantages of fibre reinforced composites. 3. Define Metallic glasses. 4. State any four applications of metallic glasses. 5. What is Carbon Nanotube? List out the various forms of CNT. Answer All Questions PART – B [2x16=32, 1x8=8] 6. (a) List out and explain the properties and applications of any four type of ceramics. (OR) (b) i) Write a short note on glass ceramics. (8) ii) Give the properties and applications of different ceramics. (8) (16) (16) 7. (a) Describe in detail the development, properties and applications of metallic glasses. (OR) (16) (b). What are shape memory alloys (SMA)? Describe the characteristics of SMA and its applications? (16) 8. (a) State the law of mixtures in composites. (8) (OR) (b) List the properties and applications of CNT. STAFF INCHARGE QPSC (8) HOD PRINCIPAL

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GANESH COLLEGE OF ENGINEERING, SALEM – 111 DEPARTMENT OF PHYSICS UNIT TEST - II Sub. Code : PH8253 Sub. Name : PHYSICS FOR ELECTRONICS ENGINEERING Dept : EEE & ECE Date : Max. Marks : Duration : Year & Sem : 05.04.2018 50 90 Mins I & II Answer All Questions PART – A [5x2=10 Marks] 1. Define the term mobility of a semiconductor. 2. What is meant by carrier transport in semiconductor? 3. Differentiate between drift and diffusion transport. 4. Mention some of the difference between zener and avalanche breakdown. 5. Distinguish between Ohmic contact and Schottky diode. Answer All Questions PART – B [2x16=32, 1x8=8] 6. (a) (i) State and explain Hall Effect (ii) With necessary theory and diagram, derive the Hall coefficient. . (16) (OR) (b Obtain an expression for the carrier concentration of electrons in the conduction band of n-type semiconductor. (16) 7. (a) With a neat sketch, describe the principle, construction and working of a Schottky diode. (OR) (16) (b). Mention the energies involved in origin of domains in ferromagnetic material. (16) 8. (a) . Explain the Drift transport (8) (OR) (b) What are paramagnetic materials? Give some examples. STAFF INCHARGE QPSC HOD (8) PRINCIPAL

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