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Previous Year Exam Questions for Applied Physics-I - AP1 of 2017 - mlrit by sri lekha

  • Applied Physics-I - AP1
  • 2017
  • PYQ
  • mlr institute of technology - mlrit
  • Computer Science Engineering
  • B.Tech
  • 21 Views
  • Uploaded 6 months ago
Sri Lekha
Sri Lekha
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HTNO MLR15 Code No: A10004 MLR INSTITUTE OF TECHNOLOGY (An Autonomous Institution) B.Tech I Year II Sem Examinations- June-2016 ENGINEERING PHYSICS (ECE & MECH) Time : 3 hours Max.Marks :75 Note: 1. This question paper contains two parts A and B. 2. Part A is compulsory which carries 25 marks. Answer all Questions in part A. 3. Part B consists of 5 units. Answer any one full question from each unit. Each question carries 10 Marks and may have a,b,c as sub questions. PART-A [25 Marks] 1. a) i) How many Bravias lattices are there for orthorhombic crystal structure. (2M) ii) Write the importance of Davisson and Germer’s experiment. b) Define i)electron gas and ii) effective mass of an electron. (2M) c) Define i) piezoelectricity and ii) relative permeability. (2M) d) i) What type of pumping is used in the He-Ne laser? (2M) ii) What is the relation between numerical aperture and fractional refractive index difference. e) i) wirite a short notes on surface area to volume ratio. (2M) ii) Define biomaterials. 2. a) What is wave function? Write the physical significance of the wave function. (3M) b) Compute the concentration of intrinsic charge carriers in a germanium crystal (3M) At 300 K. (Eg=0.72 eV, me*=me). c) A magnetic material has magnetization of 2300 Am-1 and produces a flux density of (3M) 0.00314 wb/m2. Calculate the relative permeability of the material. d) Write any six applications of He-Ne laser. (3M) e) Write the advantages and disadvantages of chemical vapor deposition method. (3M) PART-B (50 Marks) 3. a) Derive the equation for interplanar spacing of cubic crystal system. b) Calculate the interplanar spacing for (231) plane of a fcc structure whose atomic radius is 0.175 nm (OR) (6M) (4M) 4. a) Discuss a particle in one dimensional potential box. (6M) b) The position and momentum of a 1.0 KeV are measured simultaneously. If the (4M) o position is located within 1 A. What is the percentage of uncertainty in momentum. 5. a) Classify the materials into conductors, semiconductors and insulators. b) Write the differences between different types of statistics. (5M) (5M)

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(OR) 6. a) What is intrinsic semiconductor? Derive the equation for carrier concentration and its variation with temperature. b) What is Fermi level? Discuss the variation of Fermi level in intrinsic and extrinsic semiconductor. 7. a) What is electronic polariability? Derive electronic polarizability. 1b) What is Clausius-Mossotti’s equation? Derive it. (OR) 8. a) Differentiate the dia and ferromagnetic materials with examples. b) Write a note on ferrites. (5M) (5M) (5M) (5M) (5M) (5M) 9. a) Write any five differences between spontaneous emission and stimulated emission. b) Explain different types of semiconductor diode lasers. (OR) 10. a) Write any five differences between single mode fibers and multi mode fibers. b) Explain fiber optic communication system with block diagram. (5M) (5M) 11. (5M) (5M) 12. a) Write the physical , chemical and optical properties of nanomaterials. b) Write any ten applications of nanoparticles. (OR) a) Write a note fiber reinforced metals and surface acoustic wave materials. b) What are smart materials? Write their applications. ****** (5M) (5M) (6M) (4M)

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